CED CE Distribution P QHFA16P Diode Hexfred ultrafast soft recovery 16A 1200V P1621379CED-P-QHFA16P https://cdnimages.opentip.com/full/CED/CED-P-QHFA16P.jpg CE Distribution P QHFA16P Diode Hexfred ultrafast soft recovery 16A 1200V Manufacturer Part Number: P-QHFA16PHigh performance, ultrafast diodes. Improve efficiency, reduce noise, allow higher frequency operation. This is a state of the art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques, it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 1200 V and 16 A continuous current, the diode is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the HEXFRED® product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to \"snap-off\" during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The diode is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed.Features:Ultrafast and ultrasoft recoveryVery low IRRM and QrrMeasurements and Specs Cathode to Anode Breakdown Voltage (VBR)≥ 1,200 V Cathode to Anode Voltage (VR)1200 V Forward Current, maximum (IF)16 A Forward Voltage, maximum @ IF = 16 A (VFM)≤ 3.0 V, 2.5 V typical Forward Voltage, maximum @ IF = 32 A (VFM)≤ 3.93 V, 3.2 V typical Junction Capacitance (CJ)27 pF typical, ≤ 40 pF Lead temperature (Tlead)≤ 300°C Operating And Storage Temperature (TJ, TSTG)-55°C to 150°C Peak Recovery Current (IRRM)5.8 A typical, ≤ 10 A Power Dissipation, maximum @ 25°C (PD)151 W Power Dissipation, maximum @ 100°C (PD)60 W Repetitive Forward Current, maximum (IFRM)64 A Reverse Leakage Current, maximum (IRM)≤ 20 μA, 0.75 μA typical Reverse Recovery Charge (Qrr)≤ 675 nC, 260 nC typical Reverse recovery time (trr)30 ns Series Inductance (LS)8.0 nH Single Pulse Forward Current (IFSM)190 A Thermal Resistance, case to heatsink (RθCS)0.50 K/W Thermal Resistance, junction to ambient (RθJA)80 K/W Thermal Resistance, junction to case (RθJC)0.83 K/W Packaging Dimensions1.4 in. × 0.6 in. × 0.2 in. Weight (Packaging)0.012 lbs. Files Specification SheetAll Models 1621379 609722154772 0.0200lbs 0.00 0.00 0.00

CE Distribution

9.5400 2025-07-16 In Stock CE Distribution P QHFA16P Diode Hexfred ultrafast soft recovery 16A 1200V

CE Distribution P-QHFA16P Diode - Hexfred, ultrafast soft recovery, 16A, 1200V

Brand CE Distribution

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Product Description

Manufacturer Part Number: P-QHFA16P

High performance, ultrafast diodes. Improve efficiency, reduce noise, allow higher frequency operation. This is a state of the art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques, it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 1200 V and 16 A continuous current, the diode is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the HEXFRED® product line features extremely low values of peak recovery current (I_RRM) and does not exhibit any tendency to "snap-off" during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The diode is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed.

Features:

Ultrafast and ultrasoft recovery
Very low I_RRM and Q_rr

Measurements and Specs

Cathode to Anode Breakdown Voltage (V_BR)

≥ 1,200 V

Cathode to Anode Voltage (V_R)

1200 V

Forward Current, maximum (I_F)

16 A

Forward Voltage, maximum @ I_F = 16 A (V_FM)

≤ 3.0 V, 2.5 V typical

Forward Voltage, maximum @ I_F = 32 A (V_FM)

≤ 3.93 V, 3.2 V typical

Junction Capacitance (C_J)

27 pF typical, ≤ 40 pF

Lead temperature (T_lead)

≤ 300°C

Operating And Storage Temperature (T_J, T_STG)

-55°C to 150°C

Peak Recovery Current (I_RRM)

5.8 A typical, ≤ 10 A

Power Dissipation, maximum @ 25°C (P_D)

151 W

Power Dissipation, maximum @ 100°C (P_D)

60 W

Repetitive Forward Current, maximum (I_FRM)

64 A

Reverse Leakage Current, maximum (I_RM)

≤ 20 μA, 0.75 μA typical

Reverse Recovery Charge (Q_rr)

≤ 675 nC, 260 nC typical

Reverse recovery time (t_rr)

30 ns

Series Inductance (L_S)

8.0 nH

Single Pulse Forward Current (I_FSM)

190 A

Thermal Resistance, case to heatsink (R_θCS)

0.50 K/W

Thermal Resistance, junction to ambient (R_θJA)

80 K/W

Thermal Resistance, junction to case (R_θJC)

0.83 K/W

Packaging Dimensions

1.4 in. × 0.6 in. × 0.2 in.

Weight (Packaging)

0.012 lbs.

Files

Specification Sheet

All Models

Attention CA Residents: Prop 65 Warning

WARNING: This product can expose you to chemicals which are known to the State of California to cause cancer, birth defects, or other reproductive harm. For more information, go to www.p65warnings.ca.gov.

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